Saligny® is a diode-less bridge rectifier employing modern MOSFET’s. The result is an active bridge that replaces the four diodes in a full-wave bridge rectifier with a mili-ohm Rdson MOSFET, to drastically reduce power dissipation, heat generation, voltage loss and diode on/off switching noise. There is no P-N junction involved, only a low miliohm conductive channel get inserted in power path. This allow big current capability, better power management, less power loss, less dynamic impedance change versus load current and better circuit performance than any available rectifier solution.

While a normal diode have at least 600mV drop at 1A, a low Rdson MOSFET will have as little as 3mV, or less, at same 1A. This is 200 times better than a PN diode and at least 100 times better than a Schottky diode.